Characterization of ECR Plasma by Using Ion Analyzer and Its Silicon Etching

이온 분석기에 의한 ECR 플라즈마의 특성 분석 및 실리콘 식각에 관한 연구

In this paper, an ion analyzer is used in conjunction with a Langmuir probe to study the chracteristics of ECR plasma such as the ion temperature, ion current density and electron temperature as the operating pressure, ${\mu}$-wave power and axial position change, Silicon etching has been performed with RF-biasing and its etching chracteristics have been discussed in terms of the ion energy distribution function. The maximum value of ion current density appears in the range of 10S0-3T mbar and the broadening of ion energy distribution function increases as pressure increases. Therefore, as pressure decreases, anisotropy increases but selectivity to photoresist decreases.