합성 용질 확산법에 의한 GaAs결정 성장에 관하여

Growth of GaAs Crystals by synthesis Solute Diffusion Method

  • 문동찬 (광운대 공대 전자재료공학과) ;
  • 정홍배 (광운대 공대 전자재료공학과) ;
  • 이영희 (광운대 공대 전자재료공학과) ;
  • 김선태 (대전공업대 재료공학과) ;
  • 최영복 (광운대 대학원 전자재료공학과)
  • 발행 : 1992.01.01

초록

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

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