대한전기학회논문지 (The Transactions of the Korean Institute of Electrical Engineers)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

합성 용질 확산법에 의한 GaAs결정 성장에 관하여

Growth of GaAs Crystals by synthesis Solute Diffusion Method

  • 문동찬 (광운대 공대 전자재료공학과) ;
  • 정홍배 (광운대 공대 전자재료공학과) ;
  • 이영희 (광운대 공대 전자재료공학과) ;
  • 김선태 (대전공업대 재료공학과) ;
  • 최영복 (광운대 대학원 전자재료공학과)
  • 발행 : 1992.01.01

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초록

The GaAs bulk crystals are grown by the Synthesis Solute Diffusion(SSD) method and its properties are investigated. The crystal growth rate at optimum condition is 0.28 cm/day and their temperature dependence is R(T) = 2.92 x 10S04T exp(-1.548eV/kS1BTT) [cmS02T/day.K]. Etch pits density distribution along radial direction is order of 10S04TcmS0-2T and 10S03TcmS0-2T at the edge and middle of the wafers, respectively, and it increased exponentially along vertical direction of ingot. Moreover,it is uniformly distributed as order of 10S03TcmS0-2T in radial direction of In doped GaAs. The carrier concentration and mobilities are measured to 0.34-2.1 x 10S016T cmS0-3T and 2.3-3.3x10S03T cmS02T/V.sec, respectively.

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