Journal of Sensor Science and Technology (센서학회지)

The Korean Sensors Society (한국센서학회)
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Study on the Electro-Optic Characteristics of $CdS_{1-x}Se_{x}$ Photoconductive Thin Films

$CdS_{1-x}Se_{x}$ 광도전 박막의 전기-광학적 특성연구

  • Yang, D.I. (Dept. of Physics Education, Chonbuk Nat'l Univ.) ;
  • Shin, Y.J. (Dept. of Physics Education, Chonbuk Nat'l Univ.) ;
  • Lim, S.Y. (Dept. of Physics Education, Chonbuk Nat'l Univ.) ;
  • Park, S.M. (Dept. of Physics Education, Chonbuk Nat'l Univ.) ;
  • Choi, Y.D. (Dept. of Physics Mokwon Univ.)
  • Published : 1992.08.31
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Abstract

We report the crystal growth and the electro-optic characteristics of $CdS_{1-x}Se_{x}$ thin films. $CdS_{1-x}Se_{x}$ thin films wire deposited on the alumina plate by electron beam evaporation technique in pressure of $1.5{\times}10^{-7}$ torr, voltage of 4kV, current of 2.5mA and substrate temperature of $300^{\circ}C$. The deposited $CdS_{1-x}Se_{x}$ thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. $CdS_{1-x}Se_{x}$ photoconductive films showed high photoconductivity after annealing at $550^{\circ}C$ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allowable power dissipation and response time.

본 연구는 $CdS_{1-x}Se_{x}$의 박막을 제작하고 그 전기-광학적인 특성을 조사한 것이다. 전자선 가열증착법을 이용하여 $CdS_{1-x}Se_{x}$을 알루미나 기판위에 $1.5{\times}10^{-7}$ torr의 압력, 4kV의 전압, 2.5 mA의 전류 그리고 기판온도를 $300^{\circ}C$로 유지하여 증착하였다. 증착된 $CdS_{1-x}Se_{x}$ 박막은 X-ray 회절 실험을 통하여 볼 때, 육방정계의 결정구조를 가지며 성장되었다. $CdS_{1-x}Se_{x}$ 도전막은 특정분위기에서 $550^{\circ}C$, 30분간 열처리함으로써 높은 광전도성을 나타내게 되었다. 또한 Hall 효과, 광전류 스펙트럼, 감도, 최대 허용 전력과 응답시간 등을 조사하였다.

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