Journal of Sensor Science and Technology (센서학회지)
- Volume 1 Issue 2
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- Pages.131-145
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- 1992
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- 1225-5475(pISSN)
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- 2093-7563(eISSN)
Silicon-Wafer Direct Bonding for Single-Crystal Silicon-on-Insulator Transducers and Circuits
단결정 SOI트랜스듀서 및 회로를 위한 Si직접접합
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Chung, Gwiy-Sang
(New Structure Devices Section, Electronics and Telecommunications Research Institute) ;
- Nakamura, Tetsuro (Dept. of Electrical and Electronic Eng., Toyohashi Univ. of Technology)
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정귀상
(한국전자통신연구소 신소자구조연구실) ;
- Published : 1992.11.30
Abstract
This paper has been described a process technology for the fabrication of Si-on-insulator(SOI) transducers and circuits. The technology utilizes Si-wafer direct bonding(SDB) and mechanical-chemical(M-C) local polishing to create a SOI structure with a high-qualify, uniformly thin layer of single-crystal Si. The electrical and piezoresistive properties of the resultant thin SOI films have been investigated by SOI MOSFET's and cantilever beams, and confirmed comparable to those of bulk Si. Two kinds of pressure transducers using a SOI structure have been proposed. The shifts in sensitivity and offset voltage of the implemented pressure transducers using interfacial
본 논문은 SOI트랜스듀서 및 회로를 위해, Si 직접접합과 M-C국부연마법에 의한 박막SOI구조의 형성 공정을 기술한다. 또한, 이러한 박막SOI의 전기적 및 압저항효과 특성들을 SOI MOSFET와 cantilever빔으로 각각 조사했으며, bulk Si에 상당한다는 것이 확인되었다. 한편, SOI구조를 이용한 두 종류의 압력트랜스듀서를 제작 및 평가했다. SOI구조의 절연층을 압저항의 유전체분리층으로 이용한 압력트랜스듀서의 경우,
Keywords