ETRI Journal
- 제13권4호
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- Pages.2-9
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- 1991
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
누설전류가 작은 $1.3\mum$ GaInAsP/InP 평면매립형 레이저 다이오드
초록
Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for
키워드