ETRI Journal
- Volume 13 Issue 2
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- Pages.21-27
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- 1991
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
Effect of Annealing on the Dielectric Properties and Microstructures of Thin Tantalum Oxide Film Deposited with RF Reactive Sputtering
Abstract
Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from
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