ETRI Journal
- 제13권2호
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- Pages.21-27
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- 1991
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
Effect of Annealing on the Dielectric Properties and Microstructures of Thin Tantalum Oxide Film Deposited with RF Reactive Sputtering
초록
Effects of annealing on the dielectric properties and microstructures of thin tantalum oxide film(25nm) deposited on p-type Si substrate with rf reactive magnetron sputtering were investigated. The leakage current density was remarkably reduced from
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