반응성 동시 증착법에 의한 As-grown $YBa_2Cu_3O_{7-x}$ 박막의 결정 특성 및 표면형상에 관한 연구

Crystalline Qualities and Surface Morphologies of As-Grown $YBa_2Cu_3O_{7-x}$ Thin Films on MgO(100) Substrate by Reactive Coevaporation Method

  • 장호연 (일본 도부 CEMENT(주) 세라믹기술센타) ;
  • 도부안광 (일본 도부 CEMENT(주) 세라믹기술센타) ;
  • 토신전농 (일본 도부 CEMENT(주) 세라믹기술센타) ;
  • 청수현사 (일본 도부 CEMENT(주) 세라믹기술센타) ;
  • 추빈량삼 (일본 도부 CEMENT(주) 세라믹기술센타) ;
  • 강본당일 (일본방위대학교 재료물성공학과) ;
  • 송진태 (한양대학교 재료공학과)
  • Jang, Ho-Yeon (Fine Ceramics Research and Development Division, Chichibu Cement Co., Ltd.) ;
  • Watanabe, Yasuhiro (Fine Ceramics Research and Development Division, Chichibu Cement Co., Ltd.) ;
  • Doshida, Yutaka (Fine Ceramics Research and Development Division, Chichibu Cement Co., Ltd.) ;
  • Shimizu, Kenji (Fine Ceramics Research and Development Division, Chichibu Cement Co., Ltd.) ;
  • Okamoto, Yoichi (Fine Ceramics Research and Development Division, Chichibu Cement Co., Ltd.) ;
  • Akibama, Ryozo (Department of Materials Science and Engineering, National Defence Academy) ;
  • Song, Jin-Tae (Department of Materials Engineering, Hanyang University)
  • 발행 : 1991.08.01

초록

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{\circ}C$. The film deposited at the substrate temperature of $510^{\circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{\circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{\circ}C$ to $590^{\circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{\circ}C$ using activated RF oxygen plasma.

키워드

참고문헌

  1. Phys. Rev. Lett. v.58 C.W. Chu;P.H. Horr;R.L. Meng;L. Gao;Z.J. Huang;Y.Q. Wang
  2. Jpn. J. Appl. Phys. v.26 Y. Emoto;T. Murakami;M. Suzuki;K. Moriwaki
  3. Appl. Phys. Lett. v.52 G.K. Wehner;Y.H. Kim;A.M. Goldman
  4. Jpn. J. Appl. Phys. v.27 T. Terashima;K. Iijima;K. Yamato;Y. Bando;H. Mazaki
  5. Appl. Phys. Lett. v.53 H. Yamane;H. Masumoto;T. Hirai;H. Iwasaki;K. Watanabe;N. Kobayasi;Y. Muto;H. Kurosawa
  6. Jpn. J. Appl. Phys. v.29 no.L2199 T. Arikawa;H. Itozaki;K. Harada;K. Higaki;S. Tanaka;S. Yazu
  7. Jpn. J. Appl. Phys. v.28 no.L981 H. Asano;M. Asahi;O. Michikami
  8. J. Appl. Phys. v.66 no.8 M. Matsumoto;H. Akoh;S. Tanaka
  9. Jpn. J. Appl. Phys. v.29 H.J. Chang;Y. Watanabe;Y. Doshida;K. Shimizu;Y. Okamoto;R. Akihama;J.T. Song
  10. Crygenic Eng. v.26 Y. Doshida;H.J. Chang;Y. watanabe;K. Shimizu;Y. Okamoto;R. Akihama;J.T. Song
  11. Appl. Phys. Lett. v.53 B.M. Clemens;C.W. Nieh;J.A. Kittle;W.L. Johnson;J.Y. Josefowicz;A.T. Hunter
  12. Thin Solid Films v.181 Y. Bando;T. Terashima;K. Kijima;K. Yamamoto;K. Hirata;T. Takada;K. Kamigaki;H. Terauchi