Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 28A Issue 12
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- Pages.53-58
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- 1991
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- 1016-135X(pISSN)
Hot-Carrier Effects of $BF_2$ Ion-Implanted Surface-Channel LDD PMOSFET
$BF_2$ 이온 주입한 표면 채널 LDD PMOSFET의 Hot-Carrier 효과
Abstract
Hot-carrier induced degradation has been studied for the BF
Keywords