전자공학회논문지A (Journal of the Korean Institute of Telematics and Electronics A)
- 제28A권12호
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- Pages.53-58
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- 1991
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- 1016-135X(pISSN)
$BF_2$ 이온 주입한 표면 채널 LDD PMOSFET의 Hot-Carrier 효과
Hot-Carrier Effects of $BF_2$ Ion-Implanted Surface-Channel LDD PMOSFET
초록
Hot-carrier induced degradation has been studied for the BF
키워드