Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

The Behavior of Dopants During the Formation of T$TiSi_2$ in the Poly-Si/Single-Si Substrate with Implanted Impurities

불순물이 주입된 Poly-Si/Single-Si 기판에서 $TiSi_2$ 형성시 Dopants의 기동

  • 최진성 (한양대학교 재료공학과) ;
  • 황유상 (한양대학교 재료공학과) ;
  • 강성건 (한양대학교 재료공학과) ;
  • 김동원 (삼성전자 반도체연구소) ;
  • 문환구 (한양대학교 재료공학과) ;
  • 심태언 (한양대학교 재료공학과) ;
  • 이종길 (한양대학교 재료공학과) ;
  • 백수현 (한양대학교 재료공학과)
  • Published : 1991.12.01
Download PDF
⟨ Previous Next ⟩

Abstract

As a study to use Ti-silicides as interconnection material, the formation of Ti-silicides and the behavior of dopants were investigated for specimens where dopants are introduced on both single-Si substrate and poly-Si that was deposited on the single-Si. Result showed that stable C54 TiSiS12T formed above $700^{\circ}C$ and the formed TiSiS12T had bad surface roughness. And arsenics were chiefly redistributed in TiSiS12T while boron was accumulated near the interface between TiSiS11T and Si during RTA treatment.

Keywords