Journal of the Korean Institute of Telematics and Electronics A (전자공학회논문지A)
- Volume 28A Issue 11
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- Pages.887-893
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- 1991
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- 1016-135X(pISSN)
Effect of $BF_2$ Dopant on the Formation of Ti-Polycide
$BF_2$ Dopant가 Titanium Polycide 형성에 미치는 영향
Abstract
To take advantage of Ti-polycide, when it is contacted with both n+ and p+ active area of silicon, the effects of BF
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