한국세라믹학회지 (Journal of the Korean Ceramic Society)

  • 제28권12호
  • /
  • Pages.981-988
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  • 1991
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  • 1229-7801(pISSN)
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  • 2234-0491(eISSN)
한국세라믹학회 (The Korean Ceramic Society)
권호 표지

인상 육성한 $Bi_12GeO_20$ 결정내의 $Bi_4Ge_3O_12$석출상

Exsolution of $Bi_4Ge_3O_12$ in $Bi_12GeO_20$ Crystals Grown by Pulling Method

  • 이태근 (서울대학교 공과대학 무기재료공학과) ;
  • 정수진 (서울대학교 공과대학 무기재료공학과)
  • 발행 : 1991.12.01
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초록

Various crystal defects such as voids, inclusions dislocations, stacking faults and precipitates were observed in the Czochralski-grown Bi12GeO20 crystals. Particularly, precipitates were found in the whole crystals. The phase of these precipitates was identified as Bi4Ge3O12 by EPMA and transmission electron microscopy. The precipitates were produced by pulling rapidly from a non-stoichiometric charge. During the pulling of Bi12GeO20 crystals, the melt composition of stoichiometric charge was changed Bi-deficent with gradual volatilization of Bi2O3. Precipition of the second phase may have been affected by an abrube thermal stress. By adding excess Bi2O3 into the stoichiometric batch, the precipitation of Bi4Ge3O12 was suppressed. At a pulling speed of 2 mm/hr, clear and precipitate from crystals of Bi12GeO20 were grown from the melt of the Bi2O3 excess charge.

키워드

참고문헌

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