Langmuir Blodgett법에 의한 광전자소자

Langmuir-Blodgett Methods and Photelectronic Devices

This paper describes the necessity and utility of Langmuir-Blodgett (L-B) methods in developing molecular electronic devices. It also covers the application area and limitations of the methods. With L-B methods, the membrane thickness can be controlled in a range of 50 nm and 1000 nm depending on nature of the materials and layering methods. The molecular arrangement within the membrane can be altered by altering the surface pressure and nature of the layering materials. Such a variation can be altered by altering the surface pressure and nature of the layering materials. Such a variation can offer a new application of the methods to the future electronic devices. More over 2nd and 3rd nonlinearity generated in the nonsymmetric thin membrane will be used in the development of the optoelectronic devices.