A Study on the Ion Reflective Index of Silicon Wafer by Implantation Angle Variation.

실리콘 웨이퍼의 이온주입각 변화에 의한 이온반사율에 관한 연구

Ion reflective index and sheet resistance in the silicon oblique range smaller than 8 degree and optimization of annealing temperature have been studied. A four point probe was used to obtain the sheet resistance after annealing, while high resolution SIMS was used to determine the Boron and Fluorine atomic profiles before and after annealing. Experimental results and theory of ion reflective index are compared. Ion reflective index was found to decrease according to increasing an ion oblique angle. We introduce a simple analytical model ion reflection, concidering the Rutherford scattering model. This result can not be explained by the conventional Gaussian model.