비정질 실리콘 박막 트랜지스터의 회로 분석을 위한 해석적 모델링

Analytical Modeling for Circuit Simulation of Amorphous Silicon Thin Film Transistors

  • 발행 : 1991.05.01

초록

We develop an analytical model of the static and the dynamic characteristics of amorphous silicon thin film transistors (a-Si TFTs) in order to incorporate into a widely used circuit simulator such as SPICE. The critical parameters considered in our analytical model of a-Si TFT are the power factor (XN) of saturation source-drain current and the effective channel length (L') at saturation region. The power factor, XN must not always obey so-called

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