Analytical Modeling for Circuit Simulation of Amorphous Silicon Thin Film Transistors

비정질 실리콘 박막 트랜지스터의 회로 분석을 위한 해석적 모델링

We develop an analytical model of the static and the dynamic characteristics of amorphous silicon thin film transistors (a-Si TFTs) in order to incorporate into a widely used circuit simulator such as SPICE. The critical parameters considered in our analytical model of a-Si TFT are the power factor (XN) of saturation source-drain current and the effective channel length (L') at saturation region. The power factor, XN must not always obey so-called