초록
2wt% Al2O3와 10wt% Al2O3를 첨가하여 2000℃와 2050℃에서 가압소결된 SiC를 37 mol% NaCl과 63 mol% Na2SO4 Salt에 의해 60분까지 hot corrosion을 시켰다. 부식은 SiC표면에 형성된 SiO2층이 Na2O 이온에 의한 basic dissolution에 이해 일어남이 관찰되었고 10wt%의 Al2O3가 함유된 시편은 입계에 Al2O3를 함유한 입계상의 존재로 2wt% Al2O3가 함유된 시편보다 낮은 corrosion rate를 나타냈다. SiC와 산화물층 사이에서 gas bubble의 형성이 관찰되었고 이 gas bubble이 산화물층을 심하게 파괴하기 전까지 corrosion rate은 linear하게 변했다. 부식 양상은 개기공과 입계에서 pitting corrosion에 의해 시작되었다.
The specimens for the corrosion test were made by hot-pressing of SiC power with 2 wt% Nl2O3 and 10wt% Al2O3 additions at 2000℃ and 2050℃. The specimens were corroded in 37 mole% NaCl and 63 mole% Na2SO4 salt mixture at 1000℃ up to 60 min. SiO2 layer was formed on SiC and then this oxide layer was dissolved by Na2O ion in the salt mixture. The rate of corrosion of the specimen containing 10 wt% Al2O3 was slower than that of the specimen containing 2 wt% Al2O3. This is due to the presence of continuous grain boundary phase in the specimen containing 10 wt% Al2O3. The oxidation of SiC produced gas bubbles at the SiC-SiO2 interface. The rate of corrosion follows a linear rate law up to 50 min. and then was accelerated. This acceleration is due to the disruption oxide layer by the gas evolution at SiC-SiO2 interface. Pitting corrosion has found at open pores and grain boundaries.