Electrochemical Deposition of $CdSe_xTe_{1-x}$ Thin Films and Analysis of Their Crystal Structure

전착법에 의한 $CdSe_xTe_{1-x}$ 박막의 제작과 결정구조 분석

[ $CdSe_xTe_{1-x}$ ] ($0{\le}x{\le}1$) thin films were deposited cathodically on Ti substrates in aqueous sulfric acid solution containing 1M $CdSO_4$ and 1mM$(TeO_2+SeO_2)$. The limiting current was observed in deposition potential ranging from -0.20 to -0.65 vs.Ag/AgCl ; although its value has changed a little depending on the mole ratio x, the limiting current was almost constant in deposition potential of -0.45V in spite of the change of mole ratio x. The crystal structure of the $CdSe_xTe_{1-x}$ thin films was cubic zinc-blonde in the range of mole ratio $x=0{\sim}0.8$, and hexagonal wurtzite in the mole ratio x=1 When the mole ratio changed from x=0 to x=0.8, diffraction peaks was shifted to the larger diffraction angle.

음극 전착법에 의해서 $CdSe_xTe_{1-x}$ 박막을 제작하고 그 결정구조를 조사하였다. 전착 전위 -0.45V vs.Ag/AgCl 근처에서 몰비 x값에 관계없이 일정한 한계전류가 나타났으며, 생성박막은 몰비 $x=0{\sim}0.8$ 범위에서 cubic zinc-blonde 구조이었으며 x=1에서 hexagonal wurtzite 구조이었다.