Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- 제27권2호
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- Pages.81-92
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- 1990
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- 1016-135X(pISSN)
Growth of GaAs/AlGaAs Superlattice and HEMT Structures by MOCVD
MOCVD에 의한 GaAs/AlGaAs 초격자 및 HEMT 구조의 성장
- Kim, Moo-Sung (Korea Institute of Science and Technology) ;
- Kim, Yong (Korea Institute of Science and Technology) ;
- Eom, Kyung-Sook (Korea Institute of Science and Technology) ;
- Kim, Sung-Il (Korea Institute of Science and Technology) ;
- Min, Suk-Ki (Korea Institute of Science and Technology)
- 발행 : 1990.02.01
초록
We developed the technologies of wuperlattice and HEMT structures grown by MOCVD, and their characterization. In the case of GaAs/AlGaAs superlattice, the periodicity, interface abruptness and Al compositional uniformity were confirmed through the shallow angle lapping technique and double crystal x-ray measurement. Photoluminesence spectra due to quantum size effect of isolated quantum wells were also observed. The heterojunction abruptness was estimated to be within 1 monolayer fluctuation by the analysis of the relation between PL FWHM(Full Width at Half Maximum) and well width. HEMT structure was successfully grown by MOCVD. The 2 dimensional electron gas formation at heterointerface in HEMT structure were evidenced through the C-V profile, SdH (Shubnikov-de Haas)oscillation and low temperature Hall measurement. Low field mobility were as high as
MOCVD에 의하여 초격자 및 HEMT 구조를 성장하고 그 특성을 보고한다. GaAs/AlGaAs의 경우, 주기성(periodicity),계면 급준성, Al 조성 균일성을 경사연마 및 double crystal x-ray 측정에 의하여 확인하였고, 고립 양자우물의 양자효과(quantum size effect)에 의한 PL(photoluminescence) 스펙트럼을 관측하였다. 이 PL FWHM (full width at half maximum)과 우물 두께의 관계로 부터 계면 급준성이 1 monolayer fluctuation 정도인 초격자 구조가 성장되었음을 확인하였다. 한편, HEMT 구조의 경우에 헤테로 계면에 형성된 2차원 전자층의 존재를 C-V profile, SdH(shu-bnikov-de Haas)진동, 저온 Hall 측정을 통하여 확인하였다. 저온 Hall 측정에서 15K에서 sheet carrier density
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