대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제27권5호
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- Pages.716-723
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- 1990
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- 1016-135X(pISSN)
저압MOCVD법에 의하여 성장한 AlGaAs/GaAs. 양자우물구조의 TEM/AES분석
TEM/AES Analysis of AlGaAs/gaAs Quantum Well Structures Grown by LP-MOCVD
초록
Transmission electron microscopy (TEM) and anger electron microscopy(AES) studies of GaAs/AlxGa1-xAs(x=0.58) quantum wells grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) are carried out. Isolated quantum well structure having the well width as small as 15 \ulcornerand multiquantum well structure, which consisted of 51 alternating layers with each thickness of 10\ulcorner were suscessfully grown. TEM analyses have shown that their interfaces were almost completely coherent without any structural disorder, alloy clustering and crystal defect. AES depth resolution have shown the compositional periodicity of superlattice structure.
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