Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Effects of Implanted $BF_2$ on the Formation of Ti-Silicides

Si 기판에 주입된 $BF_2$ 불순물이 Ti silieides 형성에 미치는 영향

  • 최석훈 (한양대학교 재료공학과) ;
  • 최진석 (한양대학교 재료공학과) ;
  • 백수현 (한양대학교 재료공학과)
  • Published : 1990.12.01
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Abstract

The sheet resistance and thickness of Ti-Silicides treated RTA at 600, 700, 800\ulcorner was measured with amount of BF2 implanted in Si substrate. And the profile of BF2 was studied by SIMS. The formation of TiSi2 starts at 700\ulcorner. The Ti-Silicides almost consist of TiSi2 and have a low resistivity about 16列 cm at 800\ulcorner. The sheet resistances of Ti-silicides increase and thicknesses of it decrease with increasing dose of BF2. Considering the results of SIMS and the thickness of native oxide, the decrease of thickness of Silicides chiefly results from the increase of native oxide thickness with increasing dopants.

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