Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 27 Issue 1
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- Pages.81-90
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- 1990
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- 1016-135X(pISSN)
Stuructural and Electrical Characteristics of Ion Beam Deposited Tungsten/GaAs by High Temperature Rapid Thermal Annealing
고온 급속열처리에 의한 이온빔 증착 W/GaAs의 구조 및 전기적 특성
Abstract
In this study, ion beam deposited tungsten thin film for gate material of GaAs SAGFET(Self Aligned Gate FET) was annealed from 800\ulcorner to 900\ulcorner using RTA and detailed investigations of structural and electrical characteristics of this film were carried out using four-point probe, XRD, SEM, AES and current-voltage measurement. Investigated results showed phase of as deposited tungsten film was fine grain \ulcornerphase and phase tdransformation of this film into \ulcornerphase occured at annealing condition of 900\ulcorner, 6sec. But regardless of phase transformation, electrical characteristics of tungsten film were very stable to 900\ulcorner and in case of 900\ulcorner, 4sec annealing condition Schottky barrier height obtained from 10 diodes measurements was 0.66 + 0.003 eV.
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