Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
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A Study on Chemical Vapor Deposited SiO2 Films on Si Water

Silicon Waferdnl에 화학증착된 Silicon Dioxide 박막에 관한 연구

  • 김기열 (강원대학교 재료공학과) ;
  • 최돈복 (강원대학교 재료공학과) ;
  • 소명기 (강원대학교 재료공학과)
  • Published : 1990.02.01
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Abstract

Silicon dioxide thin film has been grown by a chemical vapor deposition (CVD) technique using SiH4, and O2 gaseous mixture on a silicon substrate. The experimental results indicated that the deposition rate as a function of the input ratio (O2/SiH4) shows two regions, increasing region and decreasing region. Also the deposition rate increases with increasing the deposition temperature. The microstructure of deposited silicon dioxide films is amorphous. The experimental results of infrared absorption spectrums indicate that Si-H and Si-OH bond increase with decreasing input ratio, but Si-O bond is independent on the input ratio. The interfacial charge of deposited silicon dioxide decreases with increasing input ratio.

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References

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