ETRI Journal
- Volume 11 Issue 4
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- Pages.98-104
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- 1989
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- 1225-6463(pISSN)
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- 2233-7326(eISSN)
Improved Nonlinear Subthreshold Region Model For HEMTs
개선된 HEMT 비선형 서브임계전압 영역모델
Abstract
Closed form solution of nonlinear 2-DEG concentration formula is proposed. This allows us to model continuous 2-DEG charge concentration as the function of gate voltage covering subthreshold region of the I-V curves. Comparisons of the Ids-Vgs characteristics and transconductance with the measured data were performed to show the accuracy of the proposed model. This way we have completely closed form I-V characteristics in subthreshold, triode and saturation region incorporating accurate charge control mechanism for HEMTs.
Keywords