대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제26권6호
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- Pages.57-62
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- 1989
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- 1016-135X(pISSN)
Si기판에 주입된 As이온이 Titanium-Silicides 형성에 미치는 영향 -Ⅰ-
Effects of As Ions Implanted in Si Substrates on the Titanium -Silicides Formation
- Chung, Ju-Hyuck (Dept. of Materials Eng., Hanyang Univ.) ;
- Choi, Jin-Seog (Dept. of Materials Eng., Hanyang Univ.) ;
- Paek, Su-Hyon (Dept. of Materials Eng., Hanyang Univ.)
- 발행 : 1989.06.01
초록
Sputter-deposited Ti film on Si substrates which were implanted with various doses of As was annealed at the temperature of 600-900
키워드