대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제26권11호
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- Pages.1652-1657
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- 1989
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- 1016-135X(pISSN)
PN 접합형 Photodiode 제작에 관한 연구
A Study on Fabrication of PN Junction Type Si Photodiode
초록
In this research, the PN junction type Si photodiodes have been fabricated on the low doped P type(Na=7x10**14 cm**-3) and N type (Nd=4x10**14cm**-3) (100) silicon substrates. We could find out that the dark current was lower in the N type substrate than in the P type substrate. Some well designed photodiodes showed relatively good optical and electronic characteristics that the dark current is lower than 5 nA at 10V of reverse bias condition, that the breakdown voltage is higher than 250V, and that the quantum efficiency is larger than 86% at the wavelength of
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