Photoeffects at p-GaP Semiconductor Interfaces

p형 GaP 반도체 계면의 광효과

Photoeffects at the p-GaP semiconductor/CsNO3 electrolyte interface were investigated in terms of their current-voltage characteristics. The photoeffects at the semiconductor-electrolyte interfaces and their photocurrent variations are verified using Ar ion laser and continuous cyclic voltammetric methods. The mechanism of charge transfer at the photogeneration in the depletion layer rather than the photodecomposition of the p-GaP semiconductor electrode surface and/or the water photoelectrolysis. The adsorption of Cs+ ions at the interface is physical adsorption.