Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 26 Issue 9
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- Pages.1369-1374
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- 1989
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- 1016-135X(pISSN)
Current Characteristics at p-GaP Semiconductor Interfaces
p형 GaP 반도체 계면의 전류 특성
Abstract
Electrical characteristics at the p-GaP semiconductor/CsNO3 electrolyte interfaces were investigated. It is found that such interfacial phenomena are well analyzed by semiconductor-semiconductor pn junction diode models and image charge effects of semiconductor-vacuum interfaces. The formation processes of electrical double layers and their potential variations are verified using cyclic voltammetric methods. The interfacial current are influenced by Cs+ ion coverage onto the semiconductor electrode surface and structure of electrical double layer.
Keywords