Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Formation of $P^+-Layer$ in GaAs Using the Open-Tube Diffusion of Zn

Open-Tube에서 Zn확산을 이용한 GaAs에의 $p^+$층 형성

  • 심규환 (한국전자통신연구소 화합물반도체연구부) ;
  • 강진영 (한국전자통신연구소 화합물반도체연구부) ;
  • 민석기 (한국과학기술원 반도체재료연구실) ;
  • 한철원 (한국과학기술원 반도체재료연구실) ;
  • 최인훈 (고려대학교 재료공학과)
  • Published : 1988.08.01
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Abstract

Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.

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