대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제25권3호
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- Pages.287-293
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- 1988
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- 1016-135X(pISSN)
계면경사가 있는 GaAs/(Al, Ga)As 초격자의 밴드구조
The Band Structure of GaAs/(Al,Ga)As Superlattice with Interface Grading
초록
This paper calculates the band structure of the GaAs/(Al,Ga) As semiconductor superlttice with the interface3 grading, in consideration of different effective masses in each region. Including the effective masses, superlattice period, well and barrier widths, and the interface, the dispersion relation is derived, and the effects that the above parameters affect the subband (or miniband) structure of the superlattice and effective energy gap are investigated. It is particularly found that this case(ma<>mb<>mc) is significantly different from the same effective mass case(ma<>mb<>mc).
키워드