Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 25 Issue 3
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- Pages.287-293
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- 1988
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- 1016-135X(pISSN)
The Band Structure of GaAs/(Al,Ga)As Superlattice with Interface Grading
계면경사가 있는 GaAs/(Al, Ga)As 초격자의 밴드구조
Abstract
This paper calculates the band structure of the GaAs/(Al,Ga) As semiconductor superlttice with the interface3 grading, in consideration of different effective masses in each region. Including the effective masses, superlattice period, well and barrier widths, and the interface, the dispersion relation is derived, and the effects that the above parameters affect the subband (or miniband) structure of the superlattice and effective energy gap are investigated. It is particularly found that this case(ma<>mb<>mc) is significantly different from the same effective mass case(ma<>mb<>mc).
Keywords