대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제25권7호
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- Pages.774-779
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- 1988
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- 1016-135X(pISSN)
BP-Si구조를 이용한 다이오드 및 Photo Cell의 제작에 관한 연구
Studies on Fabrication of Diodes and Photo Cell Using BP-Si structure
초록
The homo and hetero-junction diodes were fabricated using BP-Si structure. After removal of Si substrates, schottky diodes were fabricated on the BP bulk. The electrical properties of the diode were examined through current-voltage characteristics curve. The schottky diode with Sb electrode has a cut-in voltage of 0.33V. This value is almost equal to that of the typical schottky diodes. The breakdown voltage of the schottky diode is 30V. When BP was used for photo cell as a window, the conversion efficiency improved from 6.5% to 8.3%, and optical transmissivity of BP invreased in short wavelength region.
키워드