npn MOS 영상소자의 블루밍억제에 관한 연구

Blooming Suppression of an npn MOS Image Sensor

In order to analyze the blooming suppression mechanism of a MOS image sensor, test photodiodes have been fabricated and characterized by attaching a source follower circuit. The blooming suppression ability of npn structure compared to that of np structure is quantitatively analyzed and measured by experiment. The dependency of the blooming current on the substrate voltage, the vertical MOS gate voltage and the video voltage is measured and the optimum condition for blooming suppression is presented.