대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)
- 제25권2호
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- Pages.196-203
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- 1988
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- 1016-135X(pISSN)
GaAs MESFET의 AC특성 모델에 관한 연구
A Model for AC Characteristics of GaAs MESFET's
초록
A new analytic model for small-singnal circuit model of GaAs MESFET's is presented. This model is a charge model which considers the formation of a statioanary Gunn-domain and the transistion region that exists in the depletion region boundary. From this charge model the analytic expression of the equivalent circuit elements is derived, and the voltage dependences of each element are explained. The results of the calcualtion are in good agreement with experimental data.
키워드