Self-consistent Calculation of Electronic States in Implanted n-Type Silicon Inversion Layers

이온 주입시킨 n형 실리콘 반전층에 대한 전자상태의 Self-consistent계산

The electronic states in implanted n-type silicon inversion layers have been calculated by solving Schrodinger and Poisson's equations self-consistently. The results show that implantation affects seriously energy levels, populations, and electron distribution of n-type silicon inversion layers. The calcualted channel charge is in excellent agreement with the experimental data reported elsewhere. This analysis is expected to provide powerful means to evaluate the performance of implanted n-channel MOSTs.