Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 25 Issue 9
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- Pages.1068-1073
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- 1988
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- 1016-135X(pISSN)
$Co_2$ Laser Annealed SOI-PIN Photodiode Fabrication and its Electrical Characteristics
$Co_2$ 레이저로 열처리된 SOI-PIN Photodiode의 제작 및 전기적 특성
- Chang, Sun-Ho (GoldStar Semiconductor Ltd.) ;
- Kim, Gi-Hong (Dept. of Elec. Eng., Sogang Univ.) ;
- An, Chul (Dept. of Elec. Eng., Sogang Univ.)
- Published : 1988.09.01
Abstract
PIN-Photodiodes were fabricated with CO2 laser annealed SOI and their electric characteristics were measured. Dark current decreased and photocurrent-dark current ratio increased as the grain size of polycrystalline silicon in intrinsic region increased. In case of the largest grain, 10-20um, dark current was 30 n A (at - 4V) and photocurrent was proportional to light intensity.
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