Design of 14-14.5GHz Band Low Noise GaAsMESFET MIC Amplifier

14-14.5 GHz 대역 저잡음 GaAsMESFET MIC 증폭기 설계

A 14 to 14.5 GHz low noise MIC amplifier is designed on the $Al_2$$O_3$ substrate. The amplifier which uses a GaAsMESFET developed at COMSAT Laboratories has been designed and optivized to have gain greater than 7dB and noise figure less than 2dB using Super-Compact program. Experimental results show that the gain of the amplifier is 7 to 7.7 dB, while noise figure is 3.8 to 4.3dB through the desired band.

$Al_2$$O_3$ 基板위에 14-14.5GHz 低雜音 MIC 增幅器를 設計하였다. COMSAT 硏究所에서 開發한 GaAsMESFET를 使用하여 設計된 增幅器는 Super-Compact 프로그램을 利用하여 利得이 7dB以上. 雜音指數는 2dB以下가 되도록 最適設計하였다. 增幅器의 利得은 7-7.7dB, 雜音指數는 3.8-4.3dB로 測定되었다.