A Study on the Cd S/(p) Si heterojunction Solar Cell

CdS/(P)Si 이종접합 태양전지에 관한연구

  • 전춘생 (인하대 공대 전기공학과) ;
  • 전창식 (인하대 대학원 전기공학과) ;
  • 윤문수 (한국전기연구소 재료연구부) ;
  • 허창수 (한국전기연구소 재료연구부)
  • Published : 1988.02.01

Abstract

This work is concerned with the fabrication process and photo-response characteristics of Cd S/(p) Si solar cells. In order to fabricate the cell. low grade Si wafer has been used as an absorber and Cd S which works as a window material has been prepared by vacuum evaporation. Cd S thin film, as evaporated, is polycristal and resistance is very high but these properties are improved by annealing. The properties of the fabricated cells are found to depend largely on the transmittance of Cd S. The effects of Cd S thickness and annealing condition on the fill factor and efficiency of the cell are investigated quantitatively.

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