대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

$Poly{\cdot}Si-SiO_2$를 통한 저농도 붕소확산

Boron Diffusion of Low Concentration through Poly $Poly{\cdot}Si-SiO_2$

  • 김정회 (서울시립대학 전자공학과) ;
  • 주병권 (서울시립대학 전자공학과) ;
  • 김철주 (서울시립대학 전자공학과)
  • Kim, Jung-Hoe (Dept. of Elec. Eng., Seoul City Univ.) ;
  • Ju, Byeong-Kwon (Dept. of Elec. Eng., Seoul City Univ.) ;
  • Kim, Chul-Ju (Dept. of Elec. Eng., Seoul City Univ.)
  • 발행 : 1987.02.01
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초록

Boron diffusion into silicon through poly\ulcorneri-SiO2 was carried out for the diffusion with low concentration using CVD-BN. The result of direct boron diffusion from BN into silicon and that of boron diffusion through SiO2 from BN into silicon was compared with the result of boron diffusion through poly-Si-SiO2 from BN into silicon. In the case of boron diffusion through poly Si-SiO2, the low concentration diffusion was obtained, that is the boron surface concentration in silicon Cs=10**16 Cm**-3, and the glassy compounds were not seen.

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