Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 24 Issue 2
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- Pages.238-241
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- 1987
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- 1016-135X(pISSN)
Electroless Deposition of ITO Thin Films
무전해침전법에 의한 투명전도박막 제작에 관한 연구
Abstract
ITO thin film was prepared by the electroless deposition technique. ITO thin film had a high transmittance in the visible region and a high reflectance in the near infrared region. The energy gap of the thn film (Sn/Im=0.1) was 4.05 eV, the carrier concentration was 2x10**21 cm**-3, and the electric resistivity was 1.5x10**-3 ohm-cm. We confirmed that ITO thin film was a degenerated n-type semiconductor.
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