Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Fabrication of Hydrogenated Amorphous Silicon Thin-Film Transistors for Flat Panel Display

평판 표시기를 위한 수소화된 비정질실리콘 박막트랜지스터의 제작

  • Kim, Nam Deog (Dept. of Elec. Eng., KAIST) ;
  • Kim, Choong Ki (Dept. of Elec. Eng., KAIST) ;
  • Choi, Kwang Soo (Samsung Electron Devices) ;
  • Jang, Jin (Dept. of Physics, Kyunghee Univ.) ;
  • Lee, Choo Chon (Dept. of Physics, KAIST)
  • 김남덕 (한국과학기술원 전기 및 전자공학과) ;
  • 김충기 (한국과학기술원 전기 및 전자공학과) ;
  • 최광수 (삼성전관연구소) ;
  • 장진 (경희대학교 물리학과) ;
  • 이주천 (한국과학기술원 물리학과)
  • Published : 1987.03.01
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Abstract

Amorphous silicon thin-film transtors (TFT's) have been designed and fabricated on glass substrates. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane(SiH4) in hydorgen ambient by rf glow discharge method. Amorphous silicon nitride(a-Si:H) has been chosen as the gate dielectric material. It has been prepared by decomposing the mixed gas of silane(SiH4) and ammonia(NH3). The electrical properties and performance characteristics of the thin-film transistrs have been measured and compared with the requirements for the switching elements in liquid crystal flat panel display. The results show that liquid crystal flat panel displays can be fabricated using the thin-film transistors described in this paper.

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