대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

$AgGa_{1-x}In_{x}Se_{2}$ 박막의 광학적 특성

Optical Properties of $AgGa_{1-x}In_{x}Se_{2}$ Thin Films

  • 김형곤 (조선대학교병설공업전문대학 전기과) ;
  • 김화택 (전남대학교 자연과학대학 물리학과)
  • Kim, Hyung Gon (Dept. of Elec., Chosun Univ. Tech Junior College) ;
  • Kim, Wha Tek (Dept. of Phys., Chonnam National Univ.)
  • 발행 : 1986.05.01
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초록

The AgGa1-xInxSe2 films are deposited by a flash evaporation method onto pyrex glass substrates at temperatures between 5\ulcorner and 360\ulcorner. The single crystalline films which have X-ray diffraction peak of only (112) plane are preared at substrate temperature above 360\ulcorner. The prepared AgGa 1-xInxSe2 films are high photosensitive. The temperature coefficients of energy gap are found to be (-1.2~-4.0)x10**4 eV/K and (-3.1~-5.2)x10**-4 eV/K, and that of peak energy of spectral photoresponse curve are found to be (-1.1 ~ -3.0)x10**-4 eV/K(50K~100K) and (-2.4~-5.1)x10**-4 eV/K(100K~300K).

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