대한전자공학회논문지 (Journal of the Korean Institute of Telematics and Electronics)

대한전자공학회 (The Institute of Electronics and Information Engineers)
권호 표지

MBE에 의한 GaAs 에피층 성장을 위한 사진처리 과정

Preprocess of GaAs Epitaxial Layer Growth by MBE

  • 강태원 (동국대학교 물리학과) ;
  • 이재진 (동국대학교 물리학과) ;
  • 홍치유 (동국대학교 물리학과) ;
  • 김진황 (동국대학교 물리학과) ;
  • 정관수 (경희대학교 전자공학과)
  • Kang, Tae Won (Dept. of Physics, Dongguk Univ.) ;
  • Lee, Jae Jin (Dept. of Physics, Dongguk Univ.) ;
  • Hong, Chi You (Dept. of Physics, Dongguk Univ.) ;
  • Kim, Jin Whang (Dept. of Physics, Dongguk Univ.) ;
  • Chung, Kwan Soo (Dept. of Elec. Eng., Kyung Hee Univ.)
  • 발행 : 1986.02.01
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초록

The impurities in As and Ga sources and the contamination of the GaAs substrate prior to growing of MBE GaAs epitaxial layer have been investigated using RHEED, AES and RGA methods. The as source was contaminated by H2O, CO, CO2 and AsO, and the Ga source was contaminated by H2, H2O, CO and CO2. These contaminants could easily be removed by prebaking the source. On the other hand, GaAs substrate was contaminated principally carbon and oxygen. The oxygen could easily be removed by heating the substrate above 480\ulcorner, and the carbon could also be reduced by sputtering the substrate with 1ke V Ar+. The chemically etched substrate surface prior to growing the layer was rough, but it was made to be smooth and clean by heating it above 530 \ulcorner.

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