Characteristics of Plasma Etching and Plasma Diagnostics of $$CF_4$ Gas with Electric Probe

탐침법에 의한 $$CF_4$ 가스 프라즈마제량의 예정과 에칭 특성

  • Sung, Yung-Kwon (Dept. fo Electrical. Eng., Korea Univ.) ;
  • Shin, Dong-Ryul ;
  • Choi, Bok-Gil (Dept. fo Electrical. Eng., Korea Univ.) ;
  • Kwon, Kwang-Ho (Dept. fo Electrical. Eng., Korea Univ.)
  • 성영권 (고려대학교 전기공학과) ;
  • 신동렬 (동력자원연구소) ;
  • 최복길 (고려대학교 전기공학과) ;
  • 권광호 (고려대학교 전기공학과)
  • Published : 1986.06.01

Abstract

In this paper, the measurement of RF discharge plasma parameters is studied both analytically and experimentally by the electric probe method. In the measurement using an electric probe, we measure the parameters of plasma in CF4 etching gas and discuss the relations of the results and Si wafer etching. Also, we show that the electric probe method is attractive for various applications.

Keywords