The Transactions of the Korean Institute of Electrical Engineers (대한전기학회논문지)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Growth of GaAs Single Crystal by Horizontal Bridgman method and Wetting

수평 Bridgman법에 의한 GaAs단결정 성장 및 Wetting에 관한 연구

  • 강기문 (전북대 공대 전기공학과) ;
  • 홍봉식 (충남대 공대 전기공학과) ;
  • 한병성 (전북대 공대 전기공학과) ;
  • 온동만 (전북대 대학원 전기공학과)
  • Published : 1986.01.01
Download PDF
⟨ Previous Next ⟩

Abstract

The GaAs bulk single crystals are grown by the Horizontal Bridgman method. During the growth, one of the problems in Bridgman method is the boat wetting between GaAs molten and silica boat. This boat wetting may result in another nucleation to form twin crystals. In this study, We find that the optimal size for sand blasting is 320 mesh. Backfilling the ampoule with argon gas during the vaccum bake-out decreaes the boat wetting. The reaction mechanism of Ga with quartz to produce suboxide, Ga2O, and sillion is discussed.

Keywords