The Properties of Photodoping on the Interface Ag/Amorphous As2S3

Ag/ 비정질/As2S3경계면에서의 광도핑 특성

In this paper, the photodoping effect on the interface of Ag-amorphous As2S3 thin film has been investigated by measuring the resistance change of the Ag layer, the absorption coefficient of the As2S3, the optical density of As2S3 layer and the short-circuit photocurrents under light irradiation. As the experimental results, the photodissolution rate and the photodiffusion rate depends on the magnitude of photon energy absorbed in the As2S3. The sensitivity limit of the photodissolution rate at Ag layer was about 630[nm] and the sensitivity limit of the photodiffusion rate at the Ag-As2S3 interface was about 680[nm]. Also, it was found that the depth of photodiffusion was proportional to the square root of exposing time.