초록
$ZnCe_{1+y}O_2$상에서 CO산화반응 속도가 $300{\sim}500^{\circ}C$영역에서 측정되었다. 산화반응 속도는 CO에 1차 O2에 0.5차를 나타내는 속도식에 따랐으며 격자점의 산소와 Zn 도프에 기인되어 생성된 Vo-2e' 결함이 CO 및 O2의 활성화 sites로 작용되었다. 전기전도도 데이타와 rate law로 부터 산화반응 메카니즘이 규명되었으며 율속과정이 제안되었다
The catalytic oxidation of CO has been investigated on $ZnCe_{1+y}O_2$ at temperatures from 300 to $500^{\circ}C$ under various P_{CO} and PO_2 conditions. The oxidation rates have been correlated with 1.5-order kinetics: first order with respect to CO and 0.5 order with respect to O2. CO appears to be absorbed essentially on the O lattice of $ZnCe_{1+y}O_2$ as a molecular species, while $O_2$ adsorbs on an O vacancy as an ionic species. The conductivity data show that CO adsorption contributes electron to the conduction band and the adsorption process of $O_2$ withdraws it from an O vacancy. The oxidation mechanism and the defect model of $ZnCe_{1+y}O_2$ are inferred at given temperature and $PO_2'$s from the agreement between the conductivities and kinetic data. It is suggested that CO absorption is the rate-controlling.