Metal Deposit Distribution in Barrel Plating of Partially Conductive Load

The metal deposition behavior in the barrel tin plating has been studied for the electronic DIP products, and tried to find out some modified factors in order to explain partial ,current flow behavior of this load. The deposition distribution characteristics for DTP products should be classified with the normal barrel plating as partially conductive load. Deposit distribution curves obtained from one-dimensional model have shown strong dependence n the applied current density, rotating speed of barrel and metal ion concentration of the solution. Theoretical formula J=$\delta$'/${\beta}$-{-c$^3$/${\gamma}$-exp-(1-${\alpha}$)n${\Phi}$} derived from one-dimensional porous model has been proposed for the barrel plating behavior where higher overpotential and concentration changes take place during barrel plating.

IC전자부품 중 DIP계 종류를 바렐을 사용하여 주석도금 할 때에 그 전착현상을 조사하여 부분전류의 동태를 설명할 수 있는 변화인자를 알아보려 하였다. DIP와 같은 모양인 IC부품은 부분전도체로 구분되어지며 그 전착상태를 one-dimensional model로 분석하였을때, 가입전류밀도, 바렐의 회전속도, 용액중 금속이온 농도와 깊은 관계가 있음을 보인다. 다공질과 같은 것으로 간주한 one-dimensional model로서 의 이론식은 J=$\delta$'/$\beta$-{-c$^3$/${\gamma}$-exp-(1-$\alpha$)n$\Phi$}로 표현된다.